RJH60F5DPQ-A0 Todos los transistores

 

RJH60F5DPQ-A0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH60F5DPQ-A0

Polaridad de transistor: N-Channel

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.37

Corriente del colector DC máxima (Ic): 80

Tiempo de elevación: 85

Empaquetado / Estuche: TO247A

Búsqueda de reemplazo de RJH60F5DPQ-A0 - IGBT

 

RJH60F5DPQ-A0 Datasheet (PDF)

..1. rjh60f5dpq-a0.pdf Size:85K _renesas

RJH60F5DPQ-A0
RJH60F5DPQ-A0

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

4.1. r07ds0326ej rjh60f5dpq.pdf Size:88K _renesas

RJH60F5DPQ-A0
RJH60F5DPQ-A0

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

5.1. r07ds0055ej rjh60f5dpk.pdf Size:85K _renesas

RJH60F5DPQ-A0
RJH60F5DPQ-A0

Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 24, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

5.2. rjh60f5dpk.pdf Size:219K _renesas

RJH60F5DPQ-A0
RJH60F5DPQ-A0

Preliminary www.DataSheet4U.comRJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gate2. CollectorG3. Emitter4. Collector (Flange)123EAbsolute Max

Otros transistores... RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , RJH60F0DPQ-A0 , RJH60F3DPK , RJH60F3DPQ-A0 , RJH60F4DPQ-A0 , IRGP4068D , RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , RJH60M2DPP-M0 , RJH60M3DPE .

 

 
Back to Top

 


RJH60F5DPQ-A0
  RJH60F5DPQ-A0
  RJH60F5DPQ-A0
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JT015N065FED | FGA25S125P | MMGTU75J120U | MMGT75WD120XB6C | MMGT75W120XB6C | MMGT75W120X6C | MMGT75H120X6C | MMGT50W120XB6C | MMGT50W120X6C | MMGT50H120X6C | MMGT40H120XB6C

 

 

 
Back to Top

 

Order TRANSISTORS