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RJH60F5DPQ-A0 Specs and Replacement


   Type Designator: RJH60F5DPQ-A0
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 260.4 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.37 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 145 nS
   Coesⓘ - Output Capacitance, typ: 122 pF
   Package: TO247A
 

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RJH60F5DPQ-A0 specs

 ..1. Size:85K  renesas
 rjh60f5dpq-a0.pdf pdf_icon

RJH60F5DPQ-A0

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I... See More ⇒

 4.1. Size:88K  renesas
 r07ds0326ej rjh60f5dpq.pdf pdf_icon

RJH60F5DPQ-A0

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I... See More ⇒

 5.1. Size:85K  renesas
 r07ds0055ej rjh60f5dpk.pdf pdf_icon

RJH60F5DPQ-A0

Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 24, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I... See More ⇒

 5.2. Size:219K  renesas
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RJH60F5DPQ-A0

Preliminary www.DataSheet4U.com RJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009 Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) 1 2 3 E Absolute Max... See More ⇒

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Specs: RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , RJH60F0DPQ-A0 , RJH60F3DPK , RJH60F3DPQ-A0 , RJH60F4DPQ-A0 , GT45F122 , RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , RJH60M2DPP-M0 , RJH60M3DPE .

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