All IGBT. RJH60F5DPQ-A0 Datasheet

 

RJH60F5DPQ-A0 IGBT. Datasheet pdf. Equivalent


   Type Designator: RJH60F5DPQ-A0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 260.4
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.37
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 145
   Collector Capacity (Cc), typ, pF: 122
   Package: TO247A

 RJH60F5DPQ-A0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60F5DPQ-A0 Datasheet (PDF)

 ..1. Size:85K  renesas
 rjh60f5dpq-a0.pdf

RJH60F5DPQ-A0 RJH60F5DPQ-A0

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

 4.1. Size:88K  renesas
 r07ds0326ej rjh60f5dpq.pdf

RJH60F5DPQ-A0 RJH60F5DPQ-A0

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

 5.1. Size:85K  renesas
 r07ds0055ej rjh60f5dpk.pdf

RJH60F5DPQ-A0 RJH60F5DPQ-A0

Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 24, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

 5.2. Size:219K  renesas
 rjh60f5dpk.pdf

RJH60F5DPQ-A0 RJH60F5DPQ-A0

Preliminary www.DataSheet4U.comRJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gate2. CollectorG3. Emitter4. Collector (Flange)123EAbsolute Max

Datasheet: RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , RJH60F0DPQ-A0 , RJH60F3DPK , RJH60F3DPQ-A0 , RJH60F4DPQ-A0 , GT45F122 , RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , RJH60M2DPP-M0 , RJH60M3DPE .

 

 
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