RJH60M2DPP-M0 Todos los transistores

 

RJH60M2DPP-M0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH60M2DPP-M0

Polaridad de transistor: N-Channel

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.9

Corriente del colector DC máxima (Ic): 25

Tiempo de elevación: 80

Empaquetado / Estuche: TO220FL

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RJH60M2DPP-M0 Datasheet (PDF)

..1. rjh60m2dpp-m0.pdf Size:101K _renesas

RJH60M2DPP-M0 RJH60M2DPP-M0

Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer tech

4.1. r07ds0530ej rjh60m2dpp.pdf Size:54K _renesas

RJH60M2DPP-M0 RJH60M2DPP-M0

Preliminary DatasheetRJH60M2DPP-M0 R07DS0530EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

5.1. r07ds0531ej rjh60m2dpe.pdf Size:53K _renesas

RJH60M2DPP-M0 RJH60M2DPP-M0

Preliminary DatasheetRJH60M2DPE R07DS0531EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Aug 30, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

5.2. rjh60m2dpe.pdf Size:96K _renesas

RJH60M2DPP-M0 RJH60M2DPP-M0

Preliminary Datasheet RJH60M2DPE R07DS0531EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer technol

Otros transistores... RJH60F4DPQ-A0 , RJH60F5DPQ-A0 , RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , BT15T120ANF , RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 .

 

 
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