RJH60M2DPP-M0 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

RJH60M2DPP-M0 Specs and Replacement

Type Designator: RJH60M2DPP-M0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 33.8 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 25 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 18 nS

Coesⓘ - Output Capacitance, typ: 40 pF

Package: TO220F

RJH60M2DPP-M0 Substitution

- IGBT ⓘ Cross-Reference Search

RJH60M2DPP-M0 datasheet

..1. Size:101K renesas
rjh60m2dpp-m0.pdf pdf_icon

Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0300 600V - 12A - IGBT Rev.3.00 Application Inverter May 25, 2012 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer tech... See More ⇒

4.1. Size:54K renesas
r07ds0530ej rjh60m2dpp.pdf pdf_icon

Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0100 600 V - 12 A - IGBT Rev.1.00 Application Inverter Sep 02, 2011 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒

5.1. Size:53K renesas
r07ds0531ej rjh60m2dpe.pdf pdf_icon

Preliminary Datasheet RJH60M2DPE R07DS0531EJ0100 600 V - 12 A - IGBT Rev.1.00 Application Inverter Aug 30, 2011 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

5.2. Size:96K renesas
rjh60m2dpe.pdf pdf_icon

Preliminary Datasheet RJH60M2DPE R07DS0531EJ0300 600V - 12A - IGBT Rev.3.00 Application Inverter May 25, 2012 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer technol... See More ⇒

Specs: RJH60F4DPQ-A0 , RJH60F5DPQ-A0 , RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , SGT60U65FD1PT , RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 .