RJH60M3DPQ-A0 Todos los transistores

 

RJH60M3DPQ-A0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJH60M3DPQ-A0
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 127
   Tensión máxima colector-emisor |Vce|, V: 600
   Tensión máxima puerta-emisor |Vge|, V: 30
   Colector de Corriente Continua a 25℃ |Ic|, A: 35
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 15
   Capacitancia de salida (Cc), typ, pF: 60
   Carga total de la puerta (Qg), typ, nC: 36
   Paquete / Cubierta: TO247A

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RJH60M3DPQ-A0 Datasheet (PDF)

 ..1. Size:50K  renesas
rjh60m3dpq-a0.pdf

RJH60M3DPQ-A0
RJH60M3DPQ-A0

Preliminary DatasheetRJH60M3DPQ-A0 R07DS0534EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 4.1. Size:53K  renesas
r07ds0534ej rjh60m3dpq.pdf

RJH60M3DPQ-A0
RJH60M3DPQ-A0

Preliminary DatasheetRJH60M3DPQ-A0 R07DS0534EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 5.1. Size:41K  renesas
r07ds0533ej rjh60m3dpe.pdf

RJH60M3DPQ-A0
RJH60M3DPQ-A0

Preliminary DatasheetRJH60M3DPE R07DS0533EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 5.2. Size:97K  renesas
rjh60m3dpe.pdf

RJH60M3DPQ-A0
RJH60M3DPQ-A0

Preliminary Datasheet RJH60M3DPE R07DS0533EJ0300600V - 17A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (90 ns typ.) in one package Trench gate and thin wafer technol

 5.3. Size:102K  renesas
rjh60m3dpp-m0.pdf

RJH60M3DPQ-A0
RJH60M3DPQ-A0

Preliminary Datasheet RJH60M3DPP-M0 R07DS0532EJ0300600V - 17A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (90 ns typ.) in one package Trench gate and thin wafer tech

 5.4. Size:54K  renesas
r07ds0532ej rjh60m3dpp.pdf

RJH60M3DPQ-A0
RJH60M3DPQ-A0

Preliminary DatasheetRJH60M3DPP-M0 R07DS0532EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

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