RJH60M3DPQ-A0 Specs and Replacement
Type Designator: RJH60M3DPQ-A0
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 127 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 35 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Package: TO247A RJH60M3DPQ-A0 Substitution - IGBT ⓘ Cross-Reference Search
RJH60M3DPQ-A0 datasheet
rjh60m3dpq-a0.pdf
Preliminary Datasheet RJH60M3DPQ-A0 R07DS0534EJ0100 600 V - 17 A - IGBT Rev.1.00 Application Inverter Sep 02, 2011 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒
r07ds0534ej rjh60m3dpq.pdf
Preliminary Datasheet RJH60M3DPQ-A0 R07DS0534EJ0100 600 V - 17 A - IGBT Rev.1.00 Application Inverter Sep 02, 2011 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒
r07ds0533ej rjh60m3dpe.pdf
Preliminary Datasheet RJH60M3DPE R07DS0533EJ0100 600 V - 17 A - IGBT Rev.1.00 Application Inverter Sep 02, 2011 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒
rjh60m3dpe.pdf
Preliminary Datasheet RJH60M3DPE R07DS0533EJ0300 600V - 17A - IGBT Rev.3.00 Application Inverter May 25, 2012 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (90 ns typ.) in one package Trench gate and thin wafer technol... See More ⇒
Specs: RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , RJH60M2DPP-M0 , RJH60M3DPE , RJH60M3DPP-M0 , GT30F131 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 .
Keywords - RJH60M3DPQ-A0 transistor spec
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