RJP30E3DPP-M0 Todos los transistores

 

RJP30E3DPP-M0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJP30E3DPP-M0
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 30
   Tensión máxima colector-emisor |Vce|, V: 360
   Tensión máxima puerta-emisor |Vge|, V: 30
   Colector de Corriente Continua a 25℃ |Ic|, A: 40
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.6
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 120
   Capacitancia de salida (Cc), typ, pF: 85
   Carga total de la puerta (Qg), typ, nC: 52
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de RJP30E3DPP-M0 - IGBT

 

RJP30E3DPP-M0 Datasheet (PDF)

 ..1. Size:160K  renesas
rjp30e3dpp-m0.pdf

RJP30E3DPP-M0
RJP30E3DPP-M0

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

 4.1. Size:190K  renesas
r07ds0353ej rjp30e3dpp.pdf

RJP30E3DPP-M0
RJP30E3DPP-M0

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

 8.1. Size:149K  renesas
rjp30e2dpp-m0.pdf

RJP30E3DPP-M0
RJP30E3DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

 8.2. Size:152K  renesas
rjp30e2dpp rjh30e2 equivalent no diode.pdf

RJP30E3DPP-M0
RJP30E3DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

 8.3. Size:152K  renesas
r07ds0347ej rjp30e2dpp.pdf

RJP30E3DPP-M0
RJP30E3DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

Otros transistores... RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , CRG60T60AN3H , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE .

 

 
Back to Top

 


RJP30E3DPP-M0
  RJP30E3DPP-M0
  RJP30E3DPP-M0
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: KDG20N120H2 | GT40T321 | SIB30N65G21F | SIW30N65G21F | SIP30N65G21F | SIF30N65G21F | SIB30N60G21B | SIW30N60G21B | SIP30N60G21B | SIF30N60G21B | SL40T65FL1

 

 

 
Back to Top