All IGBT. RJP30E3DPP-M0 Datasheet

 

RJP30E3DPP-M0 Datasheet and Replacement


   Type Designator: RJP30E3DPP-M0
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 120 nS
   Coesⓘ - Output Capacitance, typ: 85 pF
   Qg ⓘ - Total Gate Charge, typ: 52 nC
   Package: TO220F
 

 RJP30E3DPP-M0 substitution

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RJP30E3DPP-M0 Datasheet (PDF)

 ..1. Size:160K  renesas
 rjp30e3dpp-m0.pdf pdf_icon

RJP30E3DPP-M0

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

 4.1. Size:190K  renesas
 r07ds0353ej rjp30e3dpp.pdf pdf_icon

RJP30E3DPP-M0

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

 8.1. Size:149K  renesas
 rjp30e2dpp-m0.pdf pdf_icon

RJP30E3DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

 8.2. Size:152K  renesas
 rjp30e2dpp rjh30e2 equivalent no diode.pdf pdf_icon

RJP30E3DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

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Datasheet: RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , TGPF30N43P , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE .

Keywords - RJP30E3DPP-M0 transistor datasheet

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 RJP30E3DPP-M0 equivalent finder
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 RJP30E3DPP-M0 replacement

 

 
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