RJP60D0DPP-M0 Todos los transistores

 

RJP60D0DPP-M0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJP60D0DPP-M0

Polaridad de transistor: N-Channel

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.6

Corriente del colector DC máxima (Ic): 45

Tiempo de elevación: 70

Empaquetado / Estuche: TO220FL

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RJP60D0DPP-M0 Datasheet (PDF)

..1. rjp60d0dpp-m0.pdf Size:76K _renesas

RJP60D0DPP-M0 RJP60D0DPP-M0

Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Mar 11, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Ou

4.1. r07ds0173ej rjp60d0dpp.pdf Size:79K _renesas

RJP60D0DPP-M0 RJP60D0DPP-M0

Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Mar 11, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Ou

5.1. r07ds0088ej rjp60d0dpm.pdf Size:75K _renesas

RJP60D0DPP-M0 RJP60D0DPP-M0

Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin

5.2. r07ds0172ej rjp60d0dpe.pdf Size:77K _renesas

RJP60D0DPP-M0 RJP60D0DPP-M0

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

 5.3. r07ds0166ej rjp60d0dpk.pdf Size:78K _renesas

RJP60D0DPP-M0 RJP60D0DPP-M0

Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jul 13, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

5.4. rjp60d0dpe.pdf Size:74K _renesas

RJP60D0DPP-M0 RJP60D0DPP-M0

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

 5.5. rjp60d0dpm.pdf Size:72K _renesas

RJP60D0DPP-M0 RJP60D0DPP-M0

Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin

5.6. rjp60d0dpk.pdf Size:75K _renesas

RJP60D0DPP-M0 RJP60D0DPP-M0

Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jul 13, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

Otros transistores... RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , IRG7S313U , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 .

 

 
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