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RJP60F0DPE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJP60F0DPE

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 1.4V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 50A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 90

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: LDPAK(S)(1)

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RJP60F0DPE Datasheet (PDF)

1.1. r07ds0585ej rjp60f0dpm.pdf Size:80K _renesas

RJP60F0DPE
RJP60F0DPE

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) ? Trench gate and thin wafer technology ? High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate

1.2. r07ds0540ej rjp60f0dpe.pdf Size:81K _renesas

RJP60F0DPE
RJP60F0DPE

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25C) ? Trench gate and thin wafer technology ? High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 ?, Ta = 25C, induct

 1.3. rjp60f0dpe.pdf Size:79K _igbt

RJP60F0DPE
RJP60F0DPE

 Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

1.4. rjp60f0dpm.pdf Size:77K _igbt

RJP60F0DPE
RJP60F0DPE

 Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C

Otros transistores... RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , IKW40N120H3 , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK .

 
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