All IGBT. RJP60F0DPE Datasheet

 

RJP60F0DPE IGBT. Datasheet pdf. Equivalent


   Type Designator: RJP60F0DPE
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 122
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.4
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 92
   Collector Capacity (Cc), typ, pF: 82
   Package: LDPAK SC83

 RJP60F0DPE Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJP60F0DPE Datasheet (PDF)

 ..1. Size:79K  renesas
rjp60f0dpe.pdf

RJP60F0DPE RJP60F0DPE

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Sep 09, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

 ..2. Size:81K  renesas
r07ds0540ej rjp60f0dpe.pdf

RJP60F0DPE RJP60F0DPE

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Sep 09, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

 5.1. Size:80K  renesas
r07ds0585ej rjp60f0dpm.pdf

RJP60F0DPE RJP60F0DPE

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

 5.2. Size:77K  renesas
rjp60f0dpm.pdf

RJP60F0DPE RJP60F0DPE

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

 8.1. Size:81K  renesas
r07ds0587ej rjp60f5dpm.pdf

RJP60F0DPE RJP60F0DPE

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0100600 V - 40 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

 8.2. Size:75K  renesas
rjp60f5dpm.pdf

RJP60F0DPE RJP60F0DPE

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0200600V - 40A - IGBT Rev.2.00High Speed Power Switching May 31, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25

 8.3. Size:76K  renesas
rjp60f4dpm.pdf

RJP60F0DPE RJP60F0DPE

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100600 V - 30 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

 8.4. Size:77K  renesas
rjp60f5dpk.pdf

RJP60F0DPE RJP60F0DPE

Preliminary Datasheet RJP60F5DPK R07DS0757EJ0100600V - 40A - IGBT Rev.1.00High Speed Power Switching May 31, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25C, inductive load) Outline RENESAS Pack

 8.5. Size:79K  renesas
r07ds0586ej rjp60f4dpm.pdf

RJP60F0DPE RJP60F0DPE

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100600 V - 30 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

Datasheet: RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , TGD30N40P , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK .

 

 
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