RJP63K2DPP-M0 Datasheet. Specs and Replacement

The RJP63K2DPP-M0 is a high-performance IGBT transistor designed for demanding power-switching applications. The device is optimized for use in resonant converters, induction heating systems, high-frequency power supplies. Its robust structure provides excellent avalanche tolerance and thermal stability, enabling reliable operation under heavy load conditions. The TO220F package ensures efficient heat dissipation and compact integration in modern power modules, making the RJP63K2DPP-M0 suitable for efficient, high-density power designs.

Type Designator: RJP63K2DPP-M0  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 25 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 630 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 35 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 26 pF

Package: TO220F

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RJP63K2DPP-M0 datasheet

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RJP63K2DPP-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Isolated pa... See More ⇒

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RJP63K2DPP-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Isolated pa... See More ⇒

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RJP63K2DPP-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Outline RENES... See More ⇒

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 r07ds0469ej rjp63k2dpk.pdf pdf_icon

RJP63K2DPP-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Outline RENES... See More ⇒

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Specs: RJP60D0DPE, RJP60D0DPP-M0, RJP60F0DPE, RJP60F0DPM, RJP60F4DPM, RJP60F5DPM, RJP63F3DPP-M0, RJP63K2DPK-M0, STGW60V60DF, RJP6085DPN-00, RJP6085DPK, RJH60F0DPK, RJH60F4DPK, RJH60F6DPK, RJH60F7ADPK, RJH60F5DPK, RJH60C9DPD

Keywords - RJP63K2DPP-M0 transistor spec

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