All IGBT. RJP63K2DPP-M0 Equivalents Search

 

RJP63K2DPP-M0 Specs and Replacement

The RJP63K2DPP-M0 is a high-performance IGBT transistor designed for demanding power-switching applications. The device is optimized for use in resonant converters, induction heating systems, high-frequency power supplies. Its robust structure provides excellent avalanche tolerance and thermal stability, enabling reliable operation under heavy load conditions. The TO220F package ensures efficient heat dissipation and compact integration in modern power modules, making the RJP63K2DPP-M0 suitable for efficient, high-density power designs.


   Type Designator: RJP63K2DPP-M0
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 25 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 630 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 26 pF
   Package: TO220F
 

 RJP63K2DPP-M0 Substitution

   - IGBT ⓘ Cross-Reference Search

 

RJP63K2DPP-M0 specs

 ..1. Size:124K  renesas
 rjp63k2dpp-m0.pdf pdf_icon

RJP63K2DPP-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Isolated pa... See More ⇒

 4.1. Size:145K  renesas
 r07ds0468ej rjp63k2dpp.pdf pdf_icon

RJP63K2DPP-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Isolated pa... See More ⇒

 5.1. Size:124K  renesas
 rjp63k2dpk-m0.pdf pdf_icon

RJP63K2DPP-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Outline RENES... See More ⇒

 5.2. Size:155K  renesas
 r07ds0469ej rjp63k2dpk.pdf pdf_icon

RJP63K2DPP-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Outline RENES... See More ⇒

SHOW MORE

Specs: RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 , STGW60V60DF , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK , RJH60F5DPK , RJH60C9DPD .

Keywords - RJP63K2DPP-M0 transistor spec

 RJP63K2DPP-M0 cross reference
 RJP63K2DPP-M0 equivalent finder
 RJP63K2DPP-M0 lookup
 RJP63K2DPP-M0 substitution
 RJP63K2DPP-M0 replacement

 

 
Back to Top

 


 
.