All IGBT. RJP60D0DPE Datasheet

 

RJP60D0DPE Datasheet and Replacement


   Type Designator: RJP60D0DPE
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 122 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 45 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Package: LDPAK SC83
      - IGBT Cross-Reference

 

RJP60D0DPE Datasheet (PDF)

 ..1. Size:77K  renesas
 r07ds0172ej rjp60d0dpe.pdf pdf_icon

RJP60D0DPE

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

 ..2. Size:74K  renesas
 rjp60d0dpe.pdf pdf_icon

RJP60D0DPE

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

 5.1. Size:75K  renesas
 r07ds0088ej rjp60d0dpm.pdf pdf_icon

RJP60D0DPE

Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin

 5.2. Size:78K  renesas
 r07ds0166ej rjp60d0dpk.pdf pdf_icon

RJP60D0DPE

Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jul 13, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

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Datasheet: RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , STGW60V60DF , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 , RJP63K2DPP-M0 .

History: IRG4PH40UD | APT102GA60B2 | F3L30R06W1E3_B11 | FGH20N60UFD | GT45G128 | BT50N60ANF | FGH30N60LSD

Keywords - RJP60D0DPE transistor datasheet

 RJP60D0DPE cross reference
 RJP60D0DPE equivalent finder
 RJP60D0DPE lookup
 RJP60D0DPE substitution
 RJP60D0DPE replacement

 

 
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