RJP60D0DPE PDF and Equivalents Search

 

RJP60D0DPE Specs and Replacement

Type Designator: RJP60D0DPE

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 122 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 45 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Package: LDPAK SC83

 RJP60D0DPE Substitution

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RJP60D0DPE datasheet

 ..1. Size:77K  renesas
 r07ds0172ej rjp60d0dpe.pdf pdf_icon

RJP60D0DPE

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 15, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli... See More ⇒

 ..2. Size:74K  renesas
 rjp60d0dpe.pdf pdf_icon

RJP60D0DPE

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 15, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli... See More ⇒

 5.1. Size:75K  renesas
 r07ds0088ej rjp60d0dpm.pdf pdf_icon

RJP60D0DPE

Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin... See More ⇒

 5.2. Size:78K  renesas
 r07ds0166ej rjp60d0dpk.pdf pdf_icon

RJP60D0DPE

Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jul 13, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli... See More ⇒

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Specs: RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , TGPF30N43P , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 , RJP63K2DPP-M0 .

Keywords - RJP60D0DPE transistor spec

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