RJP60D0DPE Todos los transistores

 

RJP60D0DPE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJP60D0DPE
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 122
   Tensión máxima colector-emisor |Vce|, V: 600
   Tensión máxima puerta-emisor |Vge|, V: 30
   Colector de Corriente Continua a 25℃ |Ic|, A: 45
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.6
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 20
   Capacitancia de salida (Cc), typ, pF: 70
   Carga total de la puerta (Qg), typ, nC: 45
   Paquete / Cubierta: LDPAK SC83

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RJP60D0DPE Datasheet (PDF)

 ..1. Size:77K  renesas
r07ds0172ej rjp60d0dpe.pdf

RJP60D0DPE
RJP60D0DPE

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

 ..2. Size:74K  renesas
rjp60d0dpe.pdf

RJP60D0DPE
RJP60D0DPE

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

 5.1. Size:75K  renesas
r07ds0088ej rjp60d0dpm.pdf

RJP60D0DPE
RJP60D0DPE

Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin

 5.2. Size:78K  renesas
r07ds0166ej rjp60d0dpk.pdf

RJP60D0DPE
RJP60D0DPE

Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jul 13, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

 5.3. Size:75K  renesas
rjp60d0dpk.pdf

RJP60D0DPE
RJP60D0DPE

Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jul 13, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

 5.4. Size:79K  renesas
r07ds0173ej rjp60d0dpp.pdf

RJP60D0DPE
RJP60D0DPE

Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Mar 11, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Ou

 5.5. Size:72K  renesas
rjp60d0dpm.pdf

RJP60D0DPE
RJP60D0DPE

Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin

 5.6. Size:76K  renesas
rjp60d0dpp-m0.pdf

RJP60D0DPE
RJP60D0DPE

Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Mar 11, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Ou

Otros transistores... RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , IXGH60N60C2 , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 , RJP63K2DPP-M0 .

 

 
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