RJP60D0DPE
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: RJP60D0DPE
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 122
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 600
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
45
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.6
V @25℃
Tjⓘ - Максимальная температура перехода:
150
℃
trⓘ -
Время нарастания типовое: 20
nS
Coesⓘ - Выходная емкость, типовая: 70
pF
Qgⓘ - Общий заряд затвора, typ: 45
nC
Тип корпуса:
LDPAK
SC83
Аналог (замена) для RJP60D0DPE
RJP60D0DPE
Datasheet (PDF)
..1. Size:77K renesas
r07ds0172ej rjp60d0dpe.pdf 
Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli
..2. Size:74K renesas
rjp60d0dpe.pdf 
Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli
5.1. Size:75K renesas
r07ds0088ej rjp60d0dpm.pdf 
Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin
5.2. Size:78K renesas
r07ds0166ej rjp60d0dpk.pdf 
Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jul 13, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli
5.3. Size:75K renesas
rjp60d0dpk.pdf 
Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jul 13, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli
5.4. Size:79K renesas
r07ds0173ej rjp60d0dpp.pdf 
Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Mar 11, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Ou
5.5. Size:72K renesas
rjp60d0dpm.pdf 
Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin
5.6. Size:76K renesas
rjp60d0dpp-m0.pdf 
Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Mar 11, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Ou
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