All IGBT. RJP63F3DPP-M0 Datasheet

 

RJP63F3DPP-M0 IGBT. Datasheet pdf. Equivalent

Type Designator: RJP63F3DPP-M0

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 630

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Collector Current |Ic|, A: 40

Rise Time, nS: 100

Package: TO220FL

RJP63F3DPP-M0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJP63F3DPP-M0 Datasheet (PDF)

0.1. rjp63f3dpp-m0.pdf Size:159K _renesas

RJP63F3DPP-M0
RJP63F3DPP-M0

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline

4.1. r07ds0321ej rjp63f3dpp.pdf Size:179K _renesas

RJP63F3DPP-M0
RJP63F3DPP-M0

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline

 9.1. rjp63k2dpp-m0.pdf Size:124K _renesas

RJP63F3DPP-M0
RJP63F3DPP-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa

9.2. rjp63k2dpk-m0.pdf Size:124K _renesas

RJP63F3DPP-M0
RJP63F3DPP-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Outline RENES

 9.3. r07ds0469ej rjp63k2dpk.pdf Size:155K _renesas

RJP63F3DPP-M0
RJP63F3DPP-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Outline RENES

9.4. r07ds0468ej rjp63k2dpp.pdf Size:145K _renesas

RJP63F3DPP-M0
RJP63F3DPP-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa

Datasheet: RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , GT20D101 , RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK .

 

 
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