RJP63F3DPP-M0 Specs and Replacement
Type Designator: RJP63F3DPP-M0
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 30 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 630 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 48 pF
Package: TO220F
RJP63F3DPP-M0 Substitution
RJP63F3DPP-M0 datasheet
rjp63f3dpp-m0.pdf
Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching May 26, 2011 Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline... See More ⇒
r07ds0321ej rjp63f3dpp.pdf
Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching May 26, 2011 Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline... See More ⇒
r07ds0468ej rjp63k2dpp.pdf
Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Isolated pa... See More ⇒
rjp63k2dpp-m0.pdf
Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Isolated pa... See More ⇒
Specs: RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , MBQ40T65FDSC , RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK .
History: SGT15T60QD1F
Keywords - RJP63F3DPP-M0 transistor spec
RJP63F3DPP-M0 cross reference
RJP63F3DPP-M0 equivalent finder
RJP63F3DPP-M0 lookup
RJP63F3DPP-M0 substitution
RJP63F3DPP-M0 replacement
History: SGT15T60QD1F
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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