RJP63F3DPP-M0 Даташит. Аналоги. Параметры и характеристики.
Наименование: RJP63F3DPP-M0
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 630 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 70 nS
Coesⓘ - Выходная емкость, типовая: 48 pF
Тип корпуса: TO220F
Аналог (замена) для RJP63F3DPP-M0
RJP63F3DPP-M0 Datasheet (PDF)
rjp63f3dpp-m0.pdf

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline
r07ds0321ej rjp63f3dpp.pdf

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline
r07ds0468ej rjp63k2dpp.pdf

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa
rjp63k2dpp-m0.pdf

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa
Другие IGBT... RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , SGT60U65FD1PT , RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK .



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