RJP63F3DPP-M0 Todos los transistores

 

RJP63F3DPP-M0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJP63F3DPP-M0

Polaridad de transistor: N-Channel

Tensión colector-emisor (Vce): 630

Voltaje de saturación colector-emisor (Vce sat): 1.7

Corriente del colector DC máxima (Ic): 40

Tiempo de elevación: 100

Empaquetado / Estuche: TO220FL

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RJP63F3DPP-M0 Datasheet (PDF)

..1. rjp63f3dpp-m0.pdf Size:159K _renesas

RJP63F3DPP-M0 RJP63F3DPP-M0

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline

4.1. r07ds0321ej rjp63f3dpp.pdf Size:179K _renesas

RJP63F3DPP-M0 RJP63F3DPP-M0

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline

9.1. rjp63k2dpp-m0.pdf Size:124K _renesas

RJP63F3DPP-M0 RJP63F3DPP-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa

9.2. rjp63k2dpk-m0.pdf Size:124K _renesas

RJP63F3DPP-M0 RJP63F3DPP-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Outline RENES

 9.3. r07ds0469ej rjp63k2dpk.pdf Size:155K _renesas

RJP63F3DPP-M0 RJP63F3DPP-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Outline RENES

9.4. r07ds0468ej rjp63k2dpp.pdf Size:145K _renesas

RJP63F3DPP-M0 RJP63F3DPP-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa

Otros transistores... RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , IRGP4068D-E , RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK .

 

 
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