RJP63F3DPP-M0 Todos los transistores

 

RJP63F3DPP-M0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJP63F3DPP-M0
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 30
   Tensión máxima colector-emisor |Vce|, V: 630
   Tensión máxima puerta-emisor |Vge|, V: 30
   Colector de Corriente Continua a 25℃ |Ic|, A: 40
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 70
   Capacitancia de salida (Cc), typ, pF: 48
   Paquete / Cubierta: TO220F

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RJP63F3DPP-M0 Datasheet (PDF)

 ..1. Size:159K  renesas
rjp63f3dpp-m0.pdf

RJP63F3DPP-M0
RJP63F3DPP-M0

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline

 4.1. Size:179K  renesas
r07ds0321ej rjp63f3dpp.pdf

RJP63F3DPP-M0
RJP63F3DPP-M0

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline

 9.1. Size:145K  renesas
r07ds0468ej rjp63k2dpp.pdf

RJP63F3DPP-M0
RJP63F3DPP-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa

 9.2. Size:124K  renesas
rjp63k2dpp-m0.pdf

RJP63F3DPP-M0
RJP63F3DPP-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa

 9.3. Size:124K  renesas
rjp63k2dpk-m0.pdf

RJP63F3DPP-M0
RJP63F3DPP-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Outline RENES

 9.4. Size:155K  renesas
r07ds0469ej rjp63k2dpk.pdf

RJP63F3DPP-M0
RJP63F3DPP-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Outline RENES

Otros transistores... RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJH60D2DPE , RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK .

 

 
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