All IGBT. RJP30H1DPP-M0 Datasheet

 

RJP30H1DPP-M0 IGBT. Datasheet pdf. Equivalent


   Type Designator: RJP30H1DPP-M0
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 20
   Maximum Collector-Emitter Voltage |Vce|, V: 360
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 30
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 80
   Collector Capacity (Cc), typ, pF: 40
   Total Gate Charge (Qg), typ, nC: 23
   Package: TO220F

 RJP30H1DPP-M0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJP30H1DPP-M0 Datasheet (PDF)

 ..1. Size:130K  renesas
rjp30h1dpp-m0.pdf

RJP30H1DPP-M0 RJP30H1DPP-M0

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

 4.1. Size:151K  renesas
r07ds0466ej rjp30h1dpp.pdf

RJP30H1DPP-M0 RJP30H1DPP-M0

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

 5.1. Size:130K  renesas
rjp30h1dpd.pdf

RJP30H1DPP-M0 RJP30H1DPP-M0

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

 5.2. Size:151K  renesas
r07ds0465ej rjp30h1dpd.pdf

RJP30H1DPP-M0 RJP30H1DPP-M0

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

Datasheet: RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , TGAN40N60F2DS , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM .

 

 
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