RJP30H1DPP-M0 Datasheet. Specs and Replacement

Type Designator: RJP30H1DPP-M0  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 20 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 80 nS

Coesⓘ - Output Capacitance, typ: 40 pF

Package: TO220F

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RJP30H1DPP-M0 datasheet

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RJP30H1DPP-M0

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Isolated p... See More ⇒

 4.1. Size:151K  renesas
 r07ds0466ej rjp30h1dpp.pdf pdf_icon

RJP30H1DPP-M0

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Isolated p... See More ⇒

 5.1. Size:130K  renesas
 rjp30h1dpd.pdf pdf_icon

RJP30H1DPP-M0

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. Low leak current ICES = 1 A max. Outline RENES... See More ⇒

 5.2. Size:151K  renesas
 r07ds0465ej rjp30h1dpd.pdf pdf_icon

RJP30H1DPP-M0

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. Low leak current ICES = 1 A max. Outline RENES... See More ⇒

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Specs: RJH60M3DPQ-A0, RJH60M5DPQ-A0, RJH60M6DPQ-A0, RJH60M7DPQ-A0, RJH60T4DPQ-A0, RJP30E2DPP-M0, RJP30E3DPP-M0, RJP30H1DPD, FGH60T65SHD, RJP30H2DPK-M0, RJP30K3DPP-M0, RJP6065DPM, RJP60D0DPE, RJP60D0DPP-M0, RJP60F0DPE, RJP60F0DPM, RJP60F4DPM

Keywords - RJP30H1DPP-M0 transistor spec

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