RJP30H1DPP-M0 Todos los transistores

 

RJP30H1DPP-M0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJP30H1DPP-M0

Tipo de transistor: IGBT

Polaridad de transistor: N-Channel

Tensión máxima colector-emisor |Vce|, V: 360

Colector de Corriente Continua a 25℃ |Ic|, A: 30

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.5

Tiempo de subida (tr), typ, nS: 150

Paquete / Cubierta: TO220FL

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RJP30H1DPP-M0 Datasheet (PDF)

 ..1. Size:130K  renesas
 rjp30h1dpp-m0.pdf

RJP30H1DPP-M0 RJP30H1DPP-M0

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

 4.1. Size:151K  renesas
 r07ds0466ej rjp30h1dpp.pdf

RJP30H1DPP-M0 RJP30H1DPP-M0

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

 5.1. Size:151K  renesas
 r07ds0465ej rjp30h1dpd.pdf

RJP30H1DPP-M0 RJP30H1DPP-M0

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

 5.2. Size:130K  renesas
 rjp30h1dpd.pdf

RJP30H1DPP-M0 RJP30H1DPP-M0

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

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