RJP30H1DPP-M0 Todos los transistores

 

RJP30H1DPP-M0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJP30H1DPP-M0

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 360

Voltaje de saturación colector-emisor (Vce sat): 1.5

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 30

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 150

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220FL

Búsqueda de reemplazo de RJP30H1DPP-M0 - IGBT

 

RJP30H1DPP-M0 Datasheet (PDF)

1.1. r07ds0466ej rjp30h1dpp.pdf Size:151K _renesas

RJP30H1DPP-M0
RJP30H1DPP-M0

 Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr =80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.  Low leak current: ICES = 1 A max.  Isolated p

1.2. rjp30h1dpp-m0.pdf Size:130K _renesas

RJP30H1DPP-M0
RJP30H1DPP-M0

 Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr =80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.  Low leak current: ICES = 1 A max.  Isolated p

 1.3. r07ds0465ej rjp30h1dpd.pdf Size:151K _renesas

RJP30H1DPP-M0
RJP30H1DPP-M0

 Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr = 80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.  Low leak current: ICES = 1 A max. Outline RENES

1.4. rjp30h1dpd.pdf Size:130K _renesas

RJP30H1DPP-M0
RJP30H1DPP-M0

 Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr = 80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.  Low leak current: ICES = 1 A max. Outline RENES

Otros transistores... RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , IRG4PC40UD , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM .

 

 
Back to Top

 


RJP30H1DPP-M0
  RJP30H1DPP-M0
  RJP30H1DPP-M0
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: MGD622 | GT50N324 | BT60N60ANF | 2PG011 | MBQ40T65FDSC | IGF40T120F | FGPF30N45TTU | FGH40T65SHDF_F155 | IXBT15N170 | IXBH9N160 |

 

 

 
Back to Top