RJP30H2DPK-M0 PDF and Equivalents Search

 

RJP30H2DPK-M0 Specs and Replacement

Type Designator: RJP30H2DPK-M0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 60 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 35 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 60 pF

Package: TO3PSG

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RJP30H2DPK-M0 datasheet

 ..1. Size:226K  renesas
 rjp30h2dpk-m0 rjp30h2a.pdf pdf_icon

RJP30H2DPK-M0

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tf = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Outline ... See More ⇒

 ..2. Size:129K  renesas
 rjp30h2dpk-m0.pdf pdf_icon

RJP30H2DPK-M0

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tf = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Outline RENES... See More ⇒

 4.1. Size:160K  renesas
 r07ds0467ej rjp30h2dpk.pdf pdf_icon

RJP30H2DPK-M0

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tf = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Outline RENES... See More ⇒

 8.1. Size:130K  renesas
 rjp30h1dpd.pdf pdf_icon

RJP30H2DPK-M0

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. Low leak current ICES = 1 A max. Outline RENES... See More ⇒

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Specs: RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , IHW40T60 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM .

History: RJH60T4DPQ-A0

Keywords - RJP30H2DPK-M0 transistor spec

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