RJP30H2DPK-M0 Todos los transistores

 

RJP30H2DPK-M0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJP30H2DPK-M0

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60

Tensión colector-emisor (Vce): 360

Voltaje de saturación colector-emisor (Vce sat): 1.4

Tensión emisor-compuerta (Veg): 30

Corriente del colector DC máxima (Ic): 35

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 180

Capacitancia de salida (Cc), pF: 60

Empaquetado / Estuche: TO3PSG

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RJP30H2DPK-M0 Datasheet (PDF)

..1. rjp30h2dpk-m0.pdf Size:129K _renesas

RJP30H2DPK-M0 RJP30H2DPK-M0

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

..2. rjp30h2dpk-m0 rjp30h2a.pdf Size:226K _renesas

RJP30H2DPK-M0 RJP30H2DPK-M0

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A maxOutline

4.1. r07ds0467ej rjp30h2dpk.pdf Size:160K _renesas

RJP30H2DPK-M0 RJP30H2DPK-M0

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

8.1. r07ds0466ej rjp30h1dpp.pdf Size:151K _renesas

RJP30H2DPK-M0 RJP30H2DPK-M0

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

8.2. rjp30h1dpp-m0.pdf Size:130K _renesas

RJP30H2DPK-M0 RJP30H2DPK-M0

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

 8.3. r07ds0465ej rjp30h1dpd.pdf Size:151K _renesas

RJP30H2DPK-M0 RJP30H2DPK-M0

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

8.4. rjp30h1dpd.pdf Size:130K _renesas

RJP30H2DPK-M0 RJP30H2DPK-M0

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

Otros transistores... RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJH60F7BDPQ-A0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM .

 

 
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