RJP30H2DPK-M0 Datasheet. Equivalente

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 rjp30h2dpk-m0 rjp30h2a.pdf

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tf = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Outline

 ..2. Size:129K  renesas
 rjp30h2dpk-m0.pdf

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tf = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Outline RENES

 4.1. Size:160K  renesas
 r07ds0467ej rjp30h2dpk.pdf

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tf = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Outline RENES

 8.1. Size:130K  renesas
 rjp30h1dpd.pdf

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. Low leak current ICES = 1 A max. Outline RENES

 8.2. Size:151K  renesas
 r07ds0466ej rjp30h1dpp.pdf

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Isolated p

 8.3. Size:151K  renesas
 r07ds0465ej rjp30h1dpd.pdf

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. Low leak current ICES = 1 A max. Outline RENES

 8.4. Size:130K  renesas
 rjp30h1dpp-m0.pdf

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Isolated p