RJP30K3DPP-M0 Specs and Replacement
Type Designator: RJP30K3DPP-M0
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 30 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
tr ⓘ - Rise Time, typ: 90 nS
Coesⓘ - Output Capacitance, typ: 84 pF
Package: TO220F
RJP30K3DPP-M0 Substitution
- IGBT ⓘ Cross-Reference Search
RJP30K3DPP-M0 datasheet
..1. Size:91K renesas
rjp30k3dpp-m0.pdf 
Preliminary Datasheet RJP30K3DPP-M0 R07DS0501EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Jul 05, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package... See More ⇒
4.1. Size:93K renesas
r07ds0501ej rjp30k3dpp.pdf
Preliminary Datasheet RJP30K3DPP-M0 R07DS0501EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Jul 05, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package... See More ⇒
9.1. Size:130K renesas
rjp30h1dpd.pdf
Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. Low leak current ICES = 1 A max. Outline RENES... See More ⇒
9.2. Size:160K renesas
r07ds0467ej rjp30h2dpk.pdf
Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tf = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Outline RENES... See More ⇒
9.3. Size:190K renesas
r07ds0353ej rjp30e3dpp.pdf
Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 15, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack... See More ⇒
9.4. Size:151K renesas
r07ds0466ej rjp30h1dpp.pdf
Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Isolated p... See More ⇒
9.5. Size:151K renesas
r07ds0465ej rjp30h1dpd.pdf
Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. Low leak current ICES = 1 A max. Outline RENES... See More ⇒
9.6. Size:160K renesas
rjp30e3dpp-m0.pdf
Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 15, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack... See More ⇒
9.7. Size:130K renesas
rjp30h1dpp-m0.pdf
Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Isolated p... See More ⇒
9.8. Size:226K renesas
rjp30h2dpk-m0 rjp30h2a.pdf
Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tf = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Outline ... See More ⇒
9.9. Size:129K renesas
rjp30h2dpk-m0.pdf
Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tf = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Outline RENES... See More ⇒
9.10. Size:149K renesas
rjp30e2dpp-m0.pdf
Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack... See More ⇒
9.11. Size:152K renesas
rjp30e2dpp rjh30e2 equivalent no diode.pdf
Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack... See More ⇒
9.12. Size:152K renesas
r07ds0347ej rjp30e2dpp.pdf
Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack... See More ⇒
Specs: RJH60M6DPQ-A0
, RJH60M7DPQ-A0
, RJH60T4DPQ-A0
, RJP30E2DPP-M0
, RJP30E3DPP-M0
, RJP30H1DPD
, RJP30H1DPP-M0
, RJP30H2DPK-M0
, MGD623S
, RJP6065DPM
, RJP60D0DPE
, RJP60D0DPP-M0
, RJP60F0DPE
, RJP60F0DPM
, RJP60F4DPM
, RJP60F5DPM
, RJP63F3DPP-M0
.
History: RJH60M1DPP-M0
Keywords - RJP30K3DPP-M0 transistor spec
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RJP30K3DPP-M0 equivalent finder
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RJP30K3DPP-M0 replacement
