RJP30K3DPP-M0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJP30K3DPP-M0
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 30
Tensión máxima colector-emisor |Vce|, V: 360
Tensión máxima puerta-emisor |Vge|, V: 30
Colector de Corriente Continua a 25℃ |Ic|, A: 40
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.1
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 90
Capacitancia de salida (Cc), typ, pF: 84
Carga total de la puerta (Qg), typ, nC: 49
Paquete / Cubierta: TO220F
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RJP30K3DPP-M0 Datasheet (PDF)
rjp30k3dpp-m0.pdf
Preliminary Datasheet RJP30K3DPP-M0 R07DS0501EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Jul 05, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package
r07ds0501ej rjp30k3dpp.pdf
Preliminary Datasheet RJP30K3DPP-M0 R07DS0501EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Jul 05, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package
rjp30h1dpd.pdf
Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES
r07ds0467ej rjp30h2dpk.pdf
Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES
r07ds0353ej rjp30e3dpp.pdf
Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack
r07ds0466ej rjp30h1dpp.pdf
Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p
r07ds0465ej rjp30h1dpd.pdf
Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES
rjp30e3dpp-m0.pdf
Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack
rjp30h1dpp-m0.pdf
Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p
rjp30h2dpk-m0 rjp30h2a.pdf
Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A maxOutline
rjp30h2dpk-m0.pdf
Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES
rjp30e2dpp-m0.pdf
Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack
rjp30e2dpp rjh30e2 equivalent no diode.pdf
Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack
r07ds0347ej rjp30e2dpp.pdf
Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack
Otros transistores... RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , IKW50N60T , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ