Справочник IGBT. RJP30K3DPP-M0

 

RJP30K3DPP-M0 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJP30K3DPP-M0
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 30
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 360
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 40
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.1
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 90
   Емкость коллектора типовая (Cc), pf: 84
   Общий заряд затвора (Qg), typ, nC: 49
   Тип корпуса: TO220F

 Аналог (замена) для RJP30K3DPP-M0

 

 

RJP30K3DPP-M0 Datasheet (PDF)

 ..1. Size:91K  renesas
rjp30k3dpp-m0.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30K3DPP-M0 R07DS0501EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Jul 05, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package

 4.1. Size:93K  renesas
r07ds0501ej rjp30k3dpp.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30K3DPP-M0 R07DS0501EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Jul 05, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package

 9.1. Size:130K  renesas
rjp30h1dpd.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

 9.2. Size:160K  renesas
r07ds0467ej rjp30h2dpk.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

 9.3. Size:190K  renesas
r07ds0353ej rjp30e3dpp.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

 9.4. Size:151K  renesas
r07ds0466ej rjp30h1dpp.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

 9.5. Size:151K  renesas
r07ds0465ej rjp30h1dpd.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

 9.6. Size:160K  renesas
rjp30e3dpp-m0.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

 9.7. Size:130K  renesas
rjp30h1dpp-m0.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

 9.8. Size:226K  renesas
rjp30h2dpk-m0 rjp30h2a.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A maxOutline

 9.9. Size:129K  renesas
rjp30h2dpk-m0.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

 9.10. Size:149K  renesas
rjp30e2dpp-m0.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

 9.11. Size:152K  renesas
rjp30e2dpp rjh30e2 equivalent no diode.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

 9.12. Size:152K  renesas
r07ds0347ej rjp30e2dpp.pdf

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

Другие IGBT... RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , CRG15T120BNR3S , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 .

 

 
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