RJP30H1DPD PDF and Equivalents Search

 

RJP30H1DPD Specs and Replacement

RJP30H1DPD is an insulated gate bipolar transistor designed for medium-power switching applications. The device supports collector-emitter voltages up to 360V and continuous collector currents of about 30A, which makes it suitable for inverters, motor drives, switch-mode power supplies, welding equipment. The RJP30H1DPD features fast switching performance, low gate charge, an integrated diode that simplifies circuit design and improves reliability when driving inductive loads. Its TO247 package provides good thermal performance and convenient mounting on a heatsink. With a robust safe operating area and low saturation voltage, the transistor ensures high efficiency and stable operation in demanding industrial environments.


   Type Designator: RJP30H1DPD
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 40 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   tr ⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 40 pF
   Package: TO252
 

 RJP30H1DPD Substitution

   - IGBT ⓘ Cross-Reference Search

 

RJP30H1DPD datasheet

 ..1. Size:130K  renesas
 rjp30h1dpd.pdf pdf_icon

RJP30H1DPD

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. Low leak current ICES = 1 A max. Outline RENES... See More ⇒

 ..2. Size:151K  renesas
 r07ds0465ej rjp30h1dpd.pdf pdf_icon

RJP30H1DPD

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. Low leak current ICES = 1 A max. Outline RENES... See More ⇒

 5.1. Size:151K  renesas
 r07ds0466ej rjp30h1dpp.pdf pdf_icon

RJP30H1DPD

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Isolated p... See More ⇒

 5.2. Size:130K  renesas
 rjp30h1dpp-m0.pdf pdf_icon

RJP30H1DPD

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Isolated p... See More ⇒

SHOW MORE

Specs: RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , IKW40T120 , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM .

History: TT050U065FBC

Keywords - RJP30H1DPD transistor spec

 RJP30H1DPD cross reference
 RJP30H1DPD equivalent finder
 RJP30H1DPD lookup
 RJP30H1DPD substitution
 RJP30H1DPD replacement

 

 
Back to Top

 


 
.