RJP30H1DPD Todos los transistores

 

RJP30H1DPD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJP30H1DPD
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 40
   Tensión máxima colector-emisor |Vce|, V: 360
   Tensión máxima puerta-emisor |Vge|, V: 30
   Colector de Corriente Continua a 25℃ |Ic|, A: 30
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.5
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 80
   Capacitancia de salida (Cc), typ, pF: 40
   Paquete / Cubierta: TO252

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RJP30H1DPD Datasheet (PDF)

 ..1. Size:130K  renesas
rjp30h1dpd.pdf

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

 ..2. Size:151K  renesas
r07ds0465ej rjp30h1dpd.pdf

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

 5.1. Size:151K  renesas
r07ds0466ej rjp30h1dpp.pdf

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

 5.2. Size:130K  renesas
rjp30h1dpp-m0.pdf

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

 8.1. Size:160K  renesas
r07ds0467ej rjp30h2dpk.pdf

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

 8.2. Size:226K  renesas
rjp30h2dpk-m0 rjp30h2a.pdf

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A maxOutline

 8.3. Size:129K  renesas
rjp30h2dpk-m0.pdf

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

Otros transistores... RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , JT075N065WED , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM .

 

 
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