RJP60F4DPM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJP60F4DPM
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 41.2 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 150 nS
Coesⓘ - Capacitancia de salida, typ: 70 pF
Paquete / Cubierta: TO3PFM SC93
Búsqueda de reemplazo de RJP60F4DPM - IGBT
RJP60F4DPM Datasheet (PDF)
rjp60f4dpm.pdf
Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100600 V - 30 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C
r07ds0586ej rjp60f4dpm.pdf
Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100600 V - 30 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C
rjp60f0dpe.pdf
Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Sep 09, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =
r07ds0585ej rjp60f0dpm.pdf
Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C
r07ds0587ej rjp60f5dpm.pdf
Preliminary Datasheet RJP60F5DPM R07DS0587EJ0100600 V - 40 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C
rjp60f5dpm.pdf
Preliminary Datasheet RJP60F5DPM R07DS0587EJ0200600V - 40A - IGBT Rev.2.00High Speed Power Switching May 31, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25
rjp60f5dpk.pdf
Preliminary Datasheet RJP60F5DPK R07DS0757EJ0100600V - 40A - IGBT Rev.1.00High Speed Power Switching May 31, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25C, inductive load) Outline RENESAS Pack
r07ds0540ej rjp60f0dpe.pdf
Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Sep 09, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =
rjp60f0dpm.pdf
Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C
Otros transistores... RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , STGW60V60DF , RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK .
History: RJH60M3DPQ-A0 | SGH80N60UF | TT100N120PF1E | RJP30H1DPD
History: RJH60M3DPQ-A0 | SGH80N60UF | TT100N120PF1E | RJP30H1DPD
Liste
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