RJP63K2DPK-M0 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJP63K2DPK-M0  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 60 W

|Vce|ⓘ - Tensión máxima colector-emisor: 630 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Coesⓘ - Capacitancia de salida, typ: 26 pF

Encapsulados: TO3PSG

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RJP63K2DPK-M0 datasheet

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 rjp63k2dpk-m0.pdf pdf_icon

RJP63K2DPK-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Outline RENES

 4.1. Size:155K  renesas
 r07ds0469ej rjp63k2dpk.pdf pdf_icon

RJP63K2DPK-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Outline RENES

 5.1. Size:145K  renesas
 r07ds0468ej rjp63k2dpp.pdf pdf_icon

RJP63K2DPK-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Isolated pa

 5.2. Size:124K  renesas
 rjp63k2dpp-m0.pdf pdf_icon

RJP63K2DPK-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Isolated pa

MOSTRAR MÁS

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