Справочник IGBT. RJP63K2DPK-M0

 

RJP63K2DPK-M0 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: RJP63K2DPK-M0

Тип транзистора: IGBT

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 630

Максимальный постоянный ток коллектора |Ic| @25℃, A: 35

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.9

Время нарастания типовое (tr), nS: 200

Тип корпуса: TO3PSG

Аналог (замена) для RJP63K2DPK-M0

 

 

RJP63K2DPK-M0 Datasheet (PDF)

 ..1. Size:124K  renesas
 rjp63k2dpk-m0.pdf

RJP63K2DPK-M0 RJP63K2DPK-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Outline RENES

 4.1. Size:155K  renesas
 r07ds0469ej rjp63k2dpk.pdf

RJP63K2DPK-M0 RJP63K2DPK-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Outline RENES

 5.1. Size:124K  renesas
 rjp63k2dpp-m0.pdf

RJP63K2DPK-M0 RJP63K2DPK-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa

 5.2. Size:145K  renesas
 r07ds0468ej rjp63k2dpp.pdf

RJP63K2DPK-M0 RJP63K2DPK-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa

Другие IGBT... RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , IRGB14C40L , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK , RJH60F5DPK .

 

 
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