RJH60D3DPE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH60D3DPE
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 113 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 16 nS
Coesⓘ - Capacitancia de salida, typ: 60 pF
Qgⓘ - Carga total de la puerta, typ: 37 nC
Paquete / Cubierta: LDPAK SC83
Búsqueda de reemplazo de RJH60D3DPE - IGBT
RJH60D3DPE Datasheet (PDF)
r07ds0161ej rjh60d3dpe.pdf
Preliminary Datasheet RJH60D3DPE R07DS0161EJ0400Silicon N Channel IGBT Rev.4.00Application: Inverter Mar 09, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60d3dpe.pdf
Preliminary Datasheet RJH60D3DPE R07DS0161EJ0500600V - 17A - IGBT Rev.5.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
r07ds0162ej rjh60d3dpp.pdf
Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Mar 09, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe
rjh60d3dpp-m0.pdf
Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0400600V - 17A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
r07ds0157ej rjh60d1dpe.pdf
Preliminary Datasheet RJH60D1DPE R07DS0157EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
r07ds0527ej rjh60d5dpq.pdf
Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60d0dpk.pdf
Preliminary Datasheet RJH60D0DPK R07DS0155EJ0400600V - 22A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
rjh60d5dpm.pdf
Preliminary Datasheet RJH60D5DPM R07DS0174EJ0200600V - 37A - IGBT Rev.2.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
r07ds0176ej rjh60d7dpm.pdf
Preliminary Datasheet RJH60D7DPM R07DS0176EJ0200Silicon N Channel IGBT Rev.2.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60d2dpe.pdf
Preliminary Datasheet RJH60D2DPE R07DS0159EJ0400600V - 12A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
rjh60d0dpm.pdf
Preliminary Datasheet RJH60D0DPM R07DS0156EJ0300600V - 22A - IGBT Rev.3.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
rjh60d1dpp-e0.pdf
Preliminary Datasheet RJH60D1DPP-E0 R07DS0893EJ0100600V - 10A - IGBT Rev.1.00Application: Inverter Nov 01, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech
rjh60d0dpq-a0.pdf
Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
r07ds0547ej rjh60d7adp.pdf
Preliminary Datasheet RJH60D7ADPK R07DS0547EJ0100600 V - 50 A - IGBT Rev.1.00Application: Inverter Sep 28, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjh60d6dpk.pdf
Preliminary Datasheet RJH60D6DPK R07DS0164EJ0400600V - 40A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
r07ds0165ej rjh60d7dpk.pdf
Preliminary Datasheet RJH60D7DPK R07DS0165EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60d1dpp-m0.pdf
Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0400600V - 10A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech
rjh60d1dpe.pdf
Preliminary Datasheet RJH60D1DPE R07DS0157EJ0400600V - 10A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
r07ds0160ej rjh60d2dpp.pdf
Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe
r07ds0175ej rjh60d6dpm.pdf
Preliminary Datasheet RJH60D6DPM R07DS0175EJ0200Silicon N Channel IGBT Rev.2.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60d7dpk.pdf
Preliminary Datasheet RJH60D7DPK R07DS0165EJ0400600V - 50A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
r07ds0174ej rjh60d5dpm.pdf
Preliminary Datasheet RJH60D5DPM R07DS0174EJ0100Silicon N Channel IGBT Rev.1.00Application: Inverter Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60d5dpk.pdf
Preliminary Datasheet RJH60D5DPK R07DS0163EJ0400600V - 37A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
r07ds0158ej rjh60d1dpp.pdf
Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe
rjh60d7dpq-e0.pdf
Preliminary Datasheet RJH60D7DPQ-E0 R07DS0740EJ0100600V - 50A - IGBT Rev.1.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjh60d7adpk.pdf
Preliminary Datasheet RJH60D7ADPK R07DS0547EJ0200600V - 50A - IGBT Rev.2.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techn
r07ds0155ej rjh60d0dpk.pdf
Preliminary Datasheet RJH60D0DPK R07DS0155EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
r07ds0156ej rjh60d0dpm.pdf
Preliminary Datasheet RJH60D0DPM R07DS0156EJ0200Silicon N Channel IGBT Rev.2.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
r07ds0163ej rjh60d5dpk.pdf
Preliminary Datasheet RJH60D5DPK R07DS0163EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60d5dpq-a0.pdf
Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60d7bdpq-e0.pdf
Preliminary Datasheet RJH60D7BDPQ-E0 R07DS0795EJ0200600V - 50A - IGBT Rev.2.00Application: Inverter Jul 13, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec
rjh60d7dpm.pdf
Preliminary Datasheet RJH60D7DPM R07DS0176EJ0400600V - 50A - IGBT Rev.4.00Application: Inverter Dec 07, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
rjh60d2dpp-e0.pdf
Preliminary Datasheet RJH60D2DPP-E0 R07DS0894EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter Nov 01, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
r07ds0164ej rjh60d6dpk.pdf
Preliminary Datasheet RJH60D6DPK R07DS0164EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60d6dpm.pdf
Preliminary Datasheet RJH60D6DPM R07DS0175EJ0300600V - 40A - IGBT Rev.3.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
rjh60d2dpp-m0.pdf
Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0400600V - 12A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
r07ds0159ej rjh60d2dpe.pdf
Preliminary Datasheet RJH60D2DPE R07DS0159EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
r07ds0526ej rjh60d0dpq.pdf
Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
Otros transistores... RJH60F7ADPK , RJH60F5DPK , RJH60C9DPD , RJH60D1DPP-M0 , RJH60D1DPE , RJH60D2DPP-M0 , RJH60D2DPE , RJH60D3DPP-M0 , FGH30S130P , RJP60D0DPK , RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , TIG110BF , TIG110GMH .
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