RJH60D3DPE Specs and Replacement
Type Designator: RJH60D3DPE
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 113 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 35 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Package: LDPAK
SC83
- IGBT ⓘ Cross-Reference Search
RJH60D3DPE datasheet
..1. Size:82K renesas
r07ds0161ej rjh60d3dpe.pdf 
Preliminary Datasheet RJH60D3DPE R07DS0161EJ0400 Silicon N Channel IGBT Rev.4.00 Application Inverter Mar 09, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
..2. Size:98K renesas
rjh60d3dpe.pdf
Preliminary Datasheet RJH60D3DPE R07DS0161EJ0500 600V - 17A - IGBT Rev.5.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒
5.1. Size:82K renesas
r07ds0162ej rjh60d3dpp.pdf
Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Mar 09, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe... See More ⇒
5.2. Size:98K renesas
rjh60d3dpp-m0.pdf
Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0400 600V - 17A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒
8.1. Size:81K renesas
r07ds0157ej rjh60d1dpe.pdf
Preliminary Datasheet RJH60D1DPE R07DS0157EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
8.2. Size:85K renesas
r07ds0527ej rjh60d5dpq.pdf
Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100 600 V - 37 A - IGBT Rev.1.00 Application Inverter Aug 26, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
8.3. Size:97K renesas
rjh60d0dpk.pdf
Preliminary Datasheet RJH60D0DPK R07DS0155EJ0400 600V - 22A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒
8.4. Size:98K renesas
rjh60d5dpm.pdf
Preliminary Datasheet RJH60D5DPM R07DS0174EJ0200 600V - 37A - IGBT Rev.2.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒
8.5. Size:84K renesas
r07ds0176ej rjh60d7dpm.pdf
Preliminary Datasheet RJH60D7DPM R07DS0176EJ0200 Silicon N Channel IGBT Rev.2.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
8.6. Size:98K renesas
rjh60d2dpe.pdf
Preliminary Datasheet RJH60D2DPE R07DS0159EJ0400 600V - 12A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒
8.7. Size:97K renesas
rjh60d0dpm.pdf
Preliminary Datasheet RJH60D0DPM R07DS0156EJ0300 600V - 22A - IGBT Rev.3.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒
8.8. Size:120K renesas
rjh60d1dpp-e0.pdf
Preliminary Datasheet RJH60D1DPP-E0 R07DS0893EJ0100 600V - 10A - IGBT Rev.1.00 Application Inverter Nov 01, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech... See More ⇒
8.9. Size:82K renesas
rjh60d0dpq-a0.pdf
Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100 600 V - 22 A - IGBT Rev.1.00 Application Inverter Aug 26, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
8.10. Size:87K renesas
r07ds0547ej rjh60d7adp.pdf
Preliminary Datasheet RJH60D7ADPK R07DS0547EJ0100 600 V - 50 A - IGBT Rev.1.00 Application Inverter Sep 28, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒
8.11. Size:98K renesas
rjh60d6dpk.pdf
Preliminary Datasheet RJH60D6DPK R07DS0164EJ0400 600V - 40A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒
8.12. Size:83K renesas
r07ds0165ej rjh60d7dpk.pdf
Preliminary Datasheet RJH60D7DPK R07DS0165EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
8.13. Size:93K renesas
rjh60d1dpp-m0.pdf
Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0400 600V - 10A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech... See More ⇒
8.14. Size:102K renesas
rjh60d1dpe.pdf
Preliminary Datasheet RJH60D1DPE R07DS0157EJ0400 600V - 10A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒
8.15. Size:82K renesas
r07ds0160ej rjh60d2dpp.pdf
Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe... See More ⇒
8.16. Size:84K renesas
r07ds0175ej rjh60d6dpm.pdf
Preliminary Datasheet RJH60D6DPM R07DS0175EJ0200 Silicon N Channel IGBT Rev.2.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
8.17. Size:98K renesas
rjh60d7dpk.pdf
Preliminary Datasheet RJH60D7DPK R07DS0165EJ0400 600V - 50A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒
8.18. Size:82K renesas
r07ds0174ej rjh60d5dpm.pdf
Preliminary Datasheet RJH60D5DPM R07DS0174EJ0100 Silicon N Channel IGBT Rev.1.00 Application Inverter Nov 15, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
8.19. Size:98K renesas
rjh60d5dpk.pdf
Preliminary Datasheet RJH60D5DPK R07DS0163EJ0400 600V - 37A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒
8.20. Size:82K renesas
r07ds0158ej rjh60d1dpp.pdf
Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe... See More ⇒
8.21. Size:104K renesas
rjh60d7dpq-e0.pdf
Preliminary Datasheet RJH60D7DPQ-E0 R07DS0740EJ0100 600V - 50A - IGBT Rev.1.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒
8.22. Size:105K renesas
rjh60d7adpk.pdf
Preliminary Datasheet RJH60D7ADPK R07DS0547EJ0200 600V - 50A - IGBT Rev.2.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techn... See More ⇒
8.23. Size:82K renesas
r07ds0155ej rjh60d0dpk.pdf
Preliminary Datasheet RJH60D0DPK R07DS0155EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 15, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
8.24. Size:83K renesas
r07ds0156ej rjh60d0dpm.pdf
Preliminary Datasheet RJH60D0DPM R07DS0156EJ0200 Silicon N Channel IGBT Rev.2.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
8.25. Size:82K renesas
r07ds0163ej rjh60d5dpk.pdf
Preliminary Datasheet RJH60D5DPK R07DS0163EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
8.26. Size:82K renesas
rjh60d5dpq-a0.pdf
Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100 600 V - 37 A - IGBT Rev.1.00 Application Inverter Aug 26, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
8.27. Size:125K renesas
rjh60d7bdpq-e0.pdf
Preliminary Datasheet RJH60D7BDPQ-E0 R07DS0795EJ0200 600V - 50A - IGBT Rev.2.00 Application Inverter Jul 13, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒
8.28. Size:110K renesas
rjh60d7dpm.pdf
Preliminary Datasheet RJH60D7DPM R07DS0176EJ0400 600V - 50A - IGBT Rev.4.00 Application Inverter Dec 07, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒
8.29. Size:121K renesas
rjh60d2dpp-e0.pdf
Preliminary Datasheet RJH60D2DPP-E0 R07DS0894EJ0100 600V - 12A - IGBT Rev.1.00 Application Inverter Nov 01, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒
8.30. Size:83K renesas
r07ds0164ej rjh60d6dpk.pdf
Preliminary Datasheet RJH60D6DPK R07DS0164EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
8.31. Size:98K renesas
rjh60d6dpm.pdf
Preliminary Datasheet RJH60D6DPM R07DS0175EJ0300 600V - 40A - IGBT Rev.3.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒
8.32. Size:99K renesas
rjh60d2dpp-m0.pdf
Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0400 600V - 12A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒
8.33. Size:82K renesas
r07ds0159ej rjh60d2dpe.pdf
Preliminary Datasheet RJH60D2DPE R07DS0159EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
8.34. Size:85K renesas
r07ds0526ej rjh60d0dpq.pdf
Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100 600 V - 22 A - IGBT Rev.1.00 Application Inverter Aug 26, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒
Specs: RJH60F7ADPK
, RJH60F5DPK
, RJH60C9DPD
, RJH60D1DPP-M0
, RJH60D1DPE
, RJH60D2DPP-M0
, RJH60D2DPE
, RJH60D3DPP-M0
, FGW75N60HD
, RJP60D0DPK
, RJH60D5DPK
, RJH60D6DPK
, RJH60D7DPK
, RJH60D0DPK
, RJP60D0DPM
, TIG110BF
, TIG110GMH
.
History: SGW13N60UF
| TT040K120EQ
Keywords - RJH60D3DPE transistor spec
RJH60D3DPE cross reference
RJH60D3DPE equivalent finder
RJH60D3DPE lookup
RJH60D3DPE substitution
RJH60D3DPE replacement
