RJP60D0DPM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJP60D0DPM
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 40 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 45 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 70 pF
Paquete / Cubierta: TO3PFM SC93
Búsqueda de reemplazo de RJP60D0DPM - IGBT
RJP60D0DPM Datasheet (PDF)
r07ds0088ej rjp60d0dpm.pdf
Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin
rjp60d0dpm.pdf
Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin
r07ds0166ej rjp60d0dpk.pdf
Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jul 13, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli
rjp60d0dpk.pdf
Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jul 13, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli
r07ds0173ej rjp60d0dpp.pdf
Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Mar 11, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Ou
r07ds0172ej rjp60d0dpe.pdf
Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli
rjp60d0dpe.pdf
Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli
rjp60d0dpp-m0.pdf
Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Mar 11, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Ou
Otros transistores... RJH60D2DPE , RJH60D3DPP-M0 , RJH60D3DPE , RJP60D0DPK , RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , SGT60U65FD1PT , TIG110BF , TIG110GMH , TIG111BF , TIG111GMH , TIG052TS , TIG056BF , TIG058E8 , TIG062E8 .
Liste
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