TIG110GMH Todos los transistores

 

TIG110GMH IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TIG110GMH
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 60 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 36 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 45 pF
   Paquete / Cubierta: TO3PMLH
 

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TIG110GMH datasheet

 ..1. Size:479K  sanyo
 tig110gmh.pdf pdf_icon

TIG110GMH

TIG110GMH Ordering number EN9018 SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG110GMH High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitte

 8.1. Size:463K  sanyo
 tig110bf.pdf pdf_icon

TIG110GMH

TIG110BF Ordering number EN9013A SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG110BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter

 9.1. Size:461K  sanyo
 tig111bf.pdf pdf_icon

TIG110GMH

TIG111BF Ordering number EN9017A SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG111BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter

 9.2. Size:474K  sanyo
 tig111gmh.pdf pdf_icon

TIG110GMH

TIG111GMH Ordering number EN9014 SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG111GMH High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitte

MOSTRAR MÁS

Otros transistores... RJH60D3DPE , RJP60D0DPK , RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , TIG110BF , FGPF4533 , TIG111BF , TIG111GMH , TIG052TS , TIG056BF , TIG058E8 , TIG062E8 , TIG064E8 , TIG065E8 .

 

 

 


 
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