TIG062E8 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TIG062E8  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 0.5 W

|Vce|ⓘ - Tensión máxima colector-emisor: 400 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 6 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100(pulse) A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 5 V @25℃

Coesⓘ - Capacitancia de salida, typ: 32 pF

Encapsulados: ECH8

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TIG062E8 datasheet

 ..1. Size:346K  sanyo
 tig062e8.pdf pdf_icon

TIG062E8

TIG062E8 Ordering number ENA1480A SANYO Semiconductors DATA SHEET N-Channel IGBT TIG062E8 Light-Controlling Flash Applications Features Low-saturation voltage. Low voltage drive (3V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee . * Halogen free compliance. Specification

 9.1. Size:322K  sanyo
 tig064e8.pdf pdf_icon

TIG062E8

TIG064E8 Ordering number ENA1602A SANYO Semiconductors DATA SHEET N-Channel IGBT TIG064E8 Light-Controlling Flash Applications Features Low-saturation voltage Low voltage drive (2.5V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee * Halogen free compliance Specifications

 9.2. Size:487K  sanyo
 tig065e8.pdf pdf_icon

TIG062E8

TIG065E8 Ordering number ENA1862 SANYO Semiconductors DATA SHEET N-Channel IGBT TIG065E8 Light-Controlling Flash Applications Features Low-saturation voltage Low voltage drive (2.5V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee * Halogen free compliance Specifications

 9.3. Size:477K  sanyo
 tig066ss.pdf pdf_icon

TIG062E8

TIG066SS Ordering number ENA1794 SANYO Semiconductors DATA SHEET N-Channel IGBT TIG066SS Light-Controlling Flash Applications Features Low-saturation voltage 4.0V drive Enhansment type Built-in Gate-to-Emitter protection diode High speed switching Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Collector-to-

MOSTRAR MÁS

Otros transistores... RJP60D0DPM, TIG110BF, TIG110GMH, TIG111BF, TIG111GMH, TIG052TS, TIG056BF, TIG058E8, CRG60T60AN3H, TIG064E8, TIG065E8, TIG066SS, DGG4015, FGM622S, FGM623S, MGD623N, MGD623S