TIG062E8 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

TIG062E8 Specs and Replacement

Type Designator: TIG062E8

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 0.5 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V

|Ic| ⓘ - Maximum Collector Current: 100(pulse) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃

Coesⓘ - Output Capacitance, typ: 32 pF

Package: ECH8

TIG062E8 Substitution

- IGBT ⓘ Cross-Reference Search

TIG062E8 datasheet

..1. Size:346K sanyo
tig062e8.pdf pdf_icon

TIG062E8 Ordering number ENA1480A SANYO Semiconductors DATA SHEET N-Channel IGBT TIG062E8 Light-Controlling Flash Applications Features Low-saturation voltage. Low voltage drive (3V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee . * Halogen free compliance. Specification... See More ⇒

9.1. Size:322K sanyo
tig064e8.pdf pdf_icon

TIG064E8 Ordering number ENA1602A SANYO Semiconductors DATA SHEET N-Channel IGBT TIG064E8 Light-Controlling Flash Applications Features Low-saturation voltage Low voltage drive (2.5V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee * Halogen free compliance Specifications ... See More ⇒

9.2. Size:487K sanyo
tig065e8.pdf pdf_icon

TIG065E8 Ordering number ENA1862 SANYO Semiconductors DATA SHEET N-Channel IGBT TIG065E8 Light-Controlling Flash Applications Features Low-saturation voltage Low voltage drive (2.5V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee * Halogen free compliance Specifications ... See More ⇒

9.3. Size:477K sanyo
tig066ss.pdf pdf_icon

TIG066SS Ordering number ENA1794 SANYO Semiconductors DATA SHEET N-Channel IGBT TIG066SS Light-Controlling Flash Applications Features Low-saturation voltage 4.0V drive Enhansment type Built-in Gate-to-Emitter protection diode High speed switching Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Collector-to-... See More ⇒

Specs: RJP60D0DPM , TIG110BF , TIG110GMH , TIG111BF , TIG111GMH , TIG052TS , TIG056BF , TIG058E8 , GT30J124 , TIG064E8 , TIG065E8 , TIG066SS , DGG4015 , FGM622S , FGM623S , MGD623N , MGD623S .