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TIG065E8 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TIG065E8
   Tipo de transistor: IGBT + Built-in Zener Diodes
   Código de marcado: ZE
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 0.5 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 4 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150(pulse) A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Coesⓘ - Capacitancia de salida, typ: 30 pF
   Paquete / Cubierta: ECH8

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TIG065E8 Datasheet (PDF)

 ..1. Size:487K  sanyo
tig065e8.pdf

TIG065E8
TIG065E8

TIG065E8 Ordering number : ENA1862SANYO SemiconductorsDATA SHEETN-Channel IGBTTIG065E8Light-Controlling Flash ApplicationsFeatures Low-saturation voltage Low voltage drive (2.5V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee * Halogen free complianceSpecifications

 9.1. Size:346K  sanyo
tig062e8.pdf

TIG065E8
TIG065E8

TIG062E8Ordering number : ENA1480ASANYO SemiconductorsDATA SHEETN-Channel IGBTTIG062E8Light-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltage drive (3V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee . * Halogen free compliance.Specification

 9.2. Size:322K  sanyo
tig064e8.pdf

TIG065E8
TIG065E8

TIG064E8 Ordering number : ENA1602ASANYO SemiconductorsDATA SHEETN-Channel IGBTTIG064E8Light-Controlling Flash ApplicationsFeatures Low-saturation voltage Low voltage drive (2.5V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee * Halogen free complianceSpecifications

 9.3. Size:477K  sanyo
tig066ss.pdf

TIG065E8
TIG065E8

TIG066SS Ordering number : ENA1794SANYO SemiconductorsDATA SHEETN-Channel IGBTTIG066SSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage 4.0V drive Enhansment type Built-in Gate-to-Emitter protection diode High speed switchingSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitCollector-to-

Otros transistores... TIG110GMH , TIG111BF , TIG111GMH , TIG052TS , TIG056BF , TIG058E8 , TIG062E8 , TIG064E8 , FGPF4536 , TIG066SS , DGG4015 , FGM622S , FGM623S , MGD623N , MGD623S , FGW50N65WE , SKW030N065 .

 

 
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