KGT30N60KDA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KGT30N60KDA
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 208 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 200 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
KGT30N60KDA Datasheet (PDF)
kgt30n60kda.pdf

SEMICONDUCTORKGT30N60KDATECHNICAL DATAGeneral DescriptionKEC NPT Trench IGBTs offer low switching losses, high energy efficiency BAOS Kand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.DIM MILLIMETERS_+A 15.90 0.30_B5.00 + 0.20FEATURES _C20.85 + 0.30_D3.00 + 0.20
kgt30n135ndh.pdf

SEMICONDUCTORKGT30N135NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avalanche c
kgt30n135kdh.pdf

SEMICONDUCTORKGT30N135KDHTECHNICAL DATAGeneral DescriptionBKEC NPT IGBTs offer low switching losses, high energy efficiency AOS Kand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.DIM MILLIMETERS_+A 15.90 0.30FEATURES _B5.00 + 0.20High speed switching _C20.85 + 0.30_D3.00 + 0.20High r
kgt30n120ndh.pdf

SEMICONDUCTORKGT30N120NDHTECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSIH(induction heating), microwave oven, etc._A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20FEATURES +_d +1.00 0.20High speed
Otros transistores... KGT15N60FDA , KGT20N60KDA , KGT25N120KDA , KGT25N120NDA , KGT25N120NDH , KGT25N135NDH , KGT30N120NDA , KGT30N120NDH , GT45F122 , KGT40N60KDA , KGT50N60KDA , RJH30E2DPP , IRG4PC60UPBF , APT100GF60B2R , APT100GF60JR , APT100GF60JRD , APT100GF60JU2 .
History: IKU06N60R | FGH30N120FTD | GT45G128 | APT13GP120BDF1 | SKB06N60 | AOK40B60D | IKB20N60H3
History: IKU06N60R | FGH30N120FTD | GT45G128 | APT13GP120BDF1 | SKB06N60 | AOK40B60D | IKB20N60H3



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
2sb772 | 2n2222a-1726 datasheet | bc516 | 2n3391 equivalent | a562 transistor | oc44 datasheet | 2sa70 | 2sa706