KGT30N60KDA datasheet, аналоги, основные параметры

Наименование: KGT30N60KDA  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 208 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃

tr ⓘ - Время нарастания типовое: 30 nS

Coesⓘ - Выходная емкость, типовая: 200 pF

Тип корпуса: TO247

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 Аналог (замена) для KGT30N60KDA

- подбор ⓘ IGBT транзистора по параметрам

 

KGT30N60KDA даташит

 ..1. Size:441K  kec
 kgt30n60kda.pdf pdf_icon

KGT30N60KDA

SEMICONDUCTOR KGT30N60KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency B A O S K and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. DIM MILLIMETERS _ + A 15.90 0.30 _ B 5.00 + 0.20 FEATURES _ C 20.85 + 0.30 _ D 3.00 + 0.20

 8.1. Size:1596K  kec
 kgt30n135ndh.pdf pdf_icon

KGT30N60KDA

SEMICONDUCTOR KGT30N135NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanced avalanche c

 8.2. Size:514K  kec
 kgt30n135kdh.pdf pdf_icon

KGT30N60KDA

SEMICONDUCTOR KGT30N135KDH TECHNICAL DATA General Description B KEC NPT IGBTs offer low switching losses, high energy efficiency A O S K and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. DIM MILLIMETERS _ + A 15.90 0.30 FEATURES _ B 5.00 + 0.20 High speed switching _ C 20.85 + 0.30 _ D 3.00 + 0.20 High r

 8.3. Size:584K  kec
 kgt30n120ndh.pdf pdf_icon

KGT30N60KDA

SEMICONDUCTOR KGT30N120NDH TECHNICAL DATA General Description A KEC NPT IGBTs offer low switching losses, high energy efficiency Q B N O K and high avalanche ruggedness for soft switching application such as DIM MILLIMETERS IH(induction heating), microwave oven, etc. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 FEATURES + _ d + 1.00 0.20 High speed

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... KGT15N60FDA, KGT20N60KDA, KGT25N120KDA, KGT25N120NDA, KGT25N120NDH, KGT25N135NDH, KGT30N120NDA, KGT30N120NDH, IRG7R313U, KGT40N60KDA, KGT50N60KDA, RJH30E2DPP, IRG4PC60UPBF, APT100GF60B2R, APT100GF60JR, APT100GF60JRD, APT100GF60JU2