Справочник IGBT. KGT30N60KDA

 

KGT30N60KDA - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: KGT30N60KDA
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 208 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 30 nS
   Coesⓘ - Выходная емкость, типовая: 200 pF
   Qgⓘ - Общий заряд затвора, typ: 170 nC
   Тип корпуса: TO247

 Аналог (замена) для KGT30N60KDA

 

 

KGT30N60KDA Datasheet (PDF)

 ..1. Size:441K  kec
 kgt30n60kda.pdf

KGT30N60KDA KGT30N60KDA

SEMICONDUCTORKGT30N60KDATECHNICAL DATAGeneral DescriptionKEC NPT Trench IGBTs offer low switching losses, high energy efficiency BAOS Kand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.DIM MILLIMETERS_+A 15.90 0.30_B5.00 + 0.20FEATURES _C20.85 + 0.30_D3.00 + 0.20

 8.1. Size:1596K  kec
 kgt30n135ndh.pdf

KGT30N60KDA KGT30N60KDA

SEMICONDUCTORKGT30N135NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avalanche c

 8.2. Size:514K  kec
 kgt30n135kdh.pdf

KGT30N60KDA KGT30N60KDA

SEMICONDUCTORKGT30N135KDHTECHNICAL DATAGeneral DescriptionBKEC NPT IGBTs offer low switching losses, high energy efficiency AOS Kand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.DIM MILLIMETERS_+A 15.90 0.30FEATURES _B5.00 + 0.20High speed switching _C20.85 + 0.30_D3.00 + 0.20High r

 8.3. Size:584K  kec
 kgt30n120ndh.pdf

KGT30N60KDA KGT30N60KDA

SEMICONDUCTORKGT30N120NDHTECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSIH(induction heating), microwave oven, etc._A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20FEATURES +_d +1.00 0.20High speed

 8.4. Size:584K  kec
 kgt30n120nda.pdf

KGT30N60KDA KGT30N60KDA

SEMICONDUCTORKGT30N120NDATECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSgeneral inverters, etc._A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20FEATURES +_d +1.00 0.20High speed switching_E3.

Другие IGBT... KGT15N60FDA , KGT20N60KDA , KGT25N120KDA , KGT25N120NDA , KGT25N120NDH , KGT25N135NDH , KGT30N120NDA , KGT30N120NDH , YGW60N65F1A1 , KGT40N60KDA , KGT50N60KDA , RJH30E2DPP , IRG4PC60UPBF , APT100GF60B2R , APT100GF60JR , APT100GF60JRD , APT100GF60JU2 .

 

 
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