IRG4PC60UPBF
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4PC60UPBF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 520
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.7
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 42
nS
Coesⓘ - Capacitancia de salida, typ: 370
pF
Qgⓘ - Carga total de la puerta, typ: 310
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de IRG4PC60UPBF
- IGBT
IRG4PC60UPBF
Datasheet (PDF)
..1. Size:231K international rectifier
irg4pc60upbf.pdf 
PD - 95568IRG4PC60UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighterVCE(on) typ. = 1.6VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15
5.1. Size:126K international rectifier
irg4pc60u.pdf
PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig
5.2. Size:122K international rectifier
irg4pc60u-p.pdf
PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig
6.1. Size:221K international rectifier
irg4pc60f.pdf
PD - 94442AIRG4PC60FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15V, IC = 60A
6.2. Size:118K international rectifier
irg4pc60f-p.pdf
PD - 94440IRG4PC60F-PFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 600V Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.50VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.@VGE = 15V, IC = 60A
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