IRG4PC60UPBF Datasheet. Specs and Replacement

Type Designator: IRG4PC60UPBF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 520 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 42 nS

Coesⓘ - Output Capacitance, typ: 370 pF

Package: TO247

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IRG4PC60UPBF datasheet

 ..1. Size:231K  international rectifier
 irg4pc60upbf.pdf pdf_icon

IRG4PC60UPBF

PD - 95568 IRG4PC60UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for high operating VCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighter VCE(on) typ. = 1.6V G parameter distribution and higher efficiency. Industry standard TO-247AC package. @VGE = 15... See More ⇒

 5.1. Size:126K  international rectifier
 irg4pc60u.pdf pdf_icon

IRG4PC60UPBF

PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C UltraFast Optimized for high operating frequencies up to 50 kHz in hard switching and VCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current power VCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig... See More ⇒

 5.2. Size:122K  international rectifier
 irg4pc60u-p.pdf pdf_icon

IRG4PC60UPBF

PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C UltraFast Optimized for high operating frequencies up to 50 kHz in hard switching and VCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current power VCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig... See More ⇒

 6.1. Size:221K  international rectifier
 irg4pc60f.pdf pdf_icon

IRG4PC60UPBF

PD - 94442A IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency. Industry standard TO-247AC package. @VGE = 15V, IC = 60A ... See More ⇒

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Specs: KGT25N120NDH, KGT25N135NDH, KGT30N120NDA, KGT30N120NDH, KGT30N60KDA, KGT40N60KDA, KGT50N60KDA, RJH30E2DPP, CRG40T65AK5HD, APT100GF60B2R, APT100GF60JR, APT100GF60JRD, APT100GF60JU2, APT100GF60JU3, APT100GT120JU2, APT100GT120JU3, APT11GF120BRD1

Keywords - IRG4PC60UPBF transistor spec

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