All IGBT. IRG4PC60UPBF Datasheet

 

IRG4PC60UPBF IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4PC60UPBF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 520 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 42 nS
   Coesⓘ - Output Capacitance, typ: 370 pF
   Qgⓘ - Total Gate Charge, typ: 310 nC
   Package: TO247

 IRG4PC60UPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4PC60UPBF Datasheet (PDF)

 ..1. Size:231K  international rectifier
 irg4pc60upbf.pdf

IRG4PC60UPBF IRG4PC60UPBF

PD - 95568IRG4PC60UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighterVCE(on) typ. = 1.6VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15

 5.1. Size:126K  international rectifier
 irg4pc60u.pdf

IRG4PC60UPBF IRG4PC60UPBF

PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig

 5.2. Size:122K  international rectifier
 irg4pc60u-p.pdf

IRG4PC60UPBF IRG4PC60UPBF

PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig

 6.1. Size:221K  international rectifier
 irg4pc60f.pdf

IRG4PC60UPBF IRG4PC60UPBF

PD - 94442AIRG4PC60FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15V, IC = 60A

 6.2. Size:118K  international rectifier
 irg4pc60f-p.pdf

IRG4PC60UPBF IRG4PC60UPBF

PD - 94440IRG4PC60F-PFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 600V Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.50VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.@VGE = 15V, IC = 60A

Datasheet: KGT25N120NDH , KGT25N135NDH , KGT30N120NDA , KGT30N120NDH , KGT30N60KDA , KGT40N60KDA , KGT50N60KDA , RJH30E2DPP , CRG40T60AK3HD , APT100GF60B2R , APT100GF60JR , APT100GF60JRD , APT100GF60JU2 , APT100GF60JU3 , APT100GT120JU2 , APT100GT120JU3 , APT11GF120BRD1 .

 

 
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