APT15GP60BDF1
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT15GP60BDF1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 56
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.2
V @25℃
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 12
nS
Coesⓘ - Capacitancia de salida, typ: 210
pF
Paquete / Cubierta:
TO247
APT15GP60BDF1
Datasheet (PDF)
..1. Size:126K apt
apt15gp60bdf1.pdf 
APT15GP60BDF1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge
3.1. Size:1026K apt
apt15gp60bdq1g.pdf
TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope
3.2. Size:253K apt
apt15gp60bdq1.pdf
TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope
3.3. Size:202K microsemi
apt15gp60bdlg.pdf
APT15GP60BDL(G)600V, 15A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.Features Typical Applicat
Otros transistores... APT11GP60K
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