APT15GP60BDF1 PDF and Equivalents Search

 

APT15GP60BDF1 Specs and Replacement

Type Designator: APT15GP60BDF1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 56 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 12 nS

Coesⓘ - Output Capacitance, typ: 210 pF

Package: TO247

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APT15GP60BDF1 datasheet

 ..1. Size:126K  apt
apt15gp60bdf1.pdf pdf_icon

APT15GP60BDF1

APT15GP60BDF1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation @ 400V, 19A C Low Gate Charge... See More ⇒

 3.1. Size:1026K  apt
apt15gp60bdq1g.pdf pdf_icon

APT15GP60BDF1

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz ope... See More ⇒

 3.2. Size:253K  apt
apt15gp60bdq1.pdf pdf_icon

APT15GP60BDF1

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz ope... See More ⇒

 3.3. Size:202K  microsemi
apt15gp60bdlg.pdf pdf_icon

APT15GP60BDF1

APT15GP60BDL(G) 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Features Typical Applicat... See More ⇒

Specs: APT11GP60K , APT12GT60BR , APT12GT60KR , APT13GP120B , APT13GP120BDF1 , APT13GP120BSC , APT13GP120K , APT15GP60B , IRG4PC50U , APT15GP60BDQ1 , APT15GP60BSC , APT15GP60K , GT60N321 , GT30F124 , GT30F125 , GT45F127 , GT45F128 .

History: SRE80N065FSUD8 | IGW40T60K | IGW40T60

Keywords - APT15GP60BDF1 transistor spec

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