APT15GP60BDQ1 Todos los transistores

 

APT15GP60BDQ1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT15GP60BDQ1

Tipo de transistor: IGBT

Polaridad de transistor: N-Channel

ESPECIFICACIONES TECNICAS

Máxima potencia disipada (Pc), W: 250

Tensión máxima colector-emisor |Vce|, V: 600

Tensión máxima puerta-emisor |Vge|, V: 20

Colector de Corriente Continua a 25℃ |Ic|, A: 56

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.2

Temperatura máxima de unión (Tj), ℃: 150

Tiempo de subida (tr), typ, nS: 12

Capacitancia de salida (Cc), typ, pF: 210

Paquete / Cubierta: TO247

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APT15GP60BDQ1 Datasheet (PDF)

 ..1. Size:253K  apt
apt15gp60bdq1.pdf

APT15GP60BDQ1
APT15GP60BDQ1

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope

 0.1. Size:1026K  apt
apt15gp60bdq1g.pdf

APT15GP60BDQ1
APT15GP60BDQ1

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope

 3.1. Size:126K  apt
apt15gp60bdf1.pdf

APT15GP60BDQ1
APT15GP60BDQ1

APT15GP60BDF1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge

 3.2. Size:202K  microsemi
apt15gp60bdlg.pdf

APT15GP60BDQ1
APT15GP60BDQ1

APT15GP60BDL(G)600V, 15A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.Features Typical Applicat

Otros transistores... APT12GT60BR , APT12GT60KR , APT13GP120B , APT13GP120BDF1 , APT13GP120BSC , APT13GP120K , APT15GP60B , APT15GP60BDF1 , RJP6065DPM , APT15GP60BSC , APT15GP60K , GT60N321 , GT30F124 , GT30F125 , GT45F127 , GT45F128 , GT30F131 .

 

 
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