APT15GP60BDQ1 Todos los transistores

 

APT15GP60BDQ1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT15GP60BDQ1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 56 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 12 nS
   Coesⓘ - Capacitancia de salida, typ: 210 pF
   Qgⓘ - Carga total de la puerta, typ: 55 nC
   Paquete / Cubierta: TO247
 

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APT15GP60BDQ1 Datasheet (PDF)

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 apt15gp60bdq1.pdf pdf_icon

APT15GP60BDQ1

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope

 0.1. Size:1026K  apt
 apt15gp60bdq1g.pdf pdf_icon

APT15GP60BDQ1

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope

 3.1. Size:126K  apt
 apt15gp60bdf1.pdf pdf_icon

APT15GP60BDQ1

APT15GP60BDF1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge

 3.2. Size:202K  microsemi
 apt15gp60bdlg.pdf pdf_icon

APT15GP60BDQ1

APT15GP60BDL(G)600V, 15A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.Features Typical Applicat

MOSTRAR MÁS

Otros transistores... APT12GT60BR , APT12GT60KR , APT13GP120B , APT13GP120BDF1 , APT13GP120BSC , APT13GP120K , APT15GP60B , APT15GP60BDF1 , STGB10NB37LZ , APT15GP60BSC , APT15GP60K , GT60N321 , GT30F124 , GT30F125 , GT45F127 , GT45F128 , GT30F131 .

History: STGW30NB60HD

 

 
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