Справочник IGBT. APT15GP60BDQ1

 

APT15GP60BDQ1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT15GP60BDQ1
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 250
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 56
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.2
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 12
   Емкость коллектора типовая (Cc), pf: 210
   Тип корпуса: TO247

 Аналог (замена) для APT15GP60BDQ1

 

 

APT15GP60BDQ1 Datasheet (PDF)

 ..1. Size:253K  apt
 apt15gp60bdq1.pdf

APT15GP60BDQ1 APT15GP60BDQ1

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope

 0.1. Size:1026K  apt
 apt15gp60bdq1g.pdf

APT15GP60BDQ1 APT15GP60BDQ1

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope

 3.1. Size:126K  apt
 apt15gp60bdf1.pdf

APT15GP60BDQ1 APT15GP60BDQ1

APT15GP60BDF1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge

 3.2. Size:202K  microsemi
 apt15gp60bdlg.pdf

APT15GP60BDQ1 APT15GP60BDQ1

APT15GP60BDL(G)600V, 15A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.Features Typical Applicat

Другие IGBT... APT12GT60BR , APT12GT60KR , APT13GP120B , APT13GP120BDF1 , APT13GP120BSC , APT13GP120K , APT15GP60B , APT15GP60BDF1 , IRG4PF50WD , APT15GP60BSC , APT15GP60K , GT60N321 , GT30F124 , GT30F125 , GT45F127 , GT45F128 , GT30F131 .

 

 
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