APT15GP60BSC
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT15GP60BSC
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 56
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.2
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 13
nS
Coesⓘ - Capacitancia de salida, typ: 210
pF
Qgⓘ - Carga total de la puerta, typ: 55
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de APT15GP60BSC
- IGBT
APT15GP60BSC
Datasheet (PDF)
..1. Size:211K apt
apt15gp60bsc.pdf 
TYPICAL PERFORMANCE CURVESAPT15GP60BSCAPT15GP60BSC600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz oper
4.1. Size:1026K apt
apt15gp60bdq1g.pdf
TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope
4.2. Size:86K apt
apt15gp60b.pdf
APT15GP60B600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge
4.3. Size:126K apt
apt15gp60bdf1.pdf
APT15GP60BDF1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge
4.4. Size:253K apt
apt15gp60bdq1.pdf
TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope
4.5. Size:265K microsemi
apt15gp60bg.pdf
APT15GP60BAPT15GP60S600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge 20
4.6. Size:202K microsemi
apt15gp60bdlg.pdf
APT15GP60BDL(G)600V, 15A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.Features Typical Applicat
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