Справочник IGBT. APT15GP60BSC

 

APT15GP60BSC - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT15GP60BSC
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 56 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 13 nS
   Coesⓘ - Выходная емкость, типовая: 210 pF
   Тип корпуса: TO247
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APT15GP60BSC Datasheet (PDF)

 ..1. Size:211K  apt
apt15gp60bsc.pdf pdf_icon

APT15GP60BSC
APT15GP60BSC

TYPICAL PERFORMANCE CURVESAPT15GP60BSCAPT15GP60BSC600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz oper

 4.1. Size:1026K  apt
apt15gp60bdq1g.pdf pdf_icon

APT15GP60BSC
APT15GP60BSC

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope

 4.2. Size:86K  apt
apt15gp60b.pdf pdf_icon

APT15GP60BSC
APT15GP60BSC

APT15GP60B600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge

 4.3. Size:126K  apt
apt15gp60bdf1.pdf pdf_icon

APT15GP60BSC
APT15GP60BSC

APT15GP60BDF1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge

Другие IGBT... APT12GT60KR , APT13GP120B , APT13GP120BDF1 , APT13GP120BSC , APT13GP120K , APT15GP60B , APT15GP60BDF1 , APT15GP60BDQ1 , RJH60F5DPQ-A0 , APT15GP60K , GT60N321 , GT30F124 , GT30F125 , GT45F127 , GT45F128 , GT30F131 , GT30G124 .

 

 
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