GT5G133 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT5G133
Tipo de transistor: IGBT
Polaridad de transistor: N-Channel
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 0.83
Tensión máxima colector-emisor |Vce|, V: 400
Tensión máxima puerta-emisor |Vge|, V: 4
Colector de Corriente Continua a 25℃ |Ic|, A: 130(pulse)
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 3
Temperatura máxima de unión (Tj), ℃: 150
Paquete / Cubierta: TSON8
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GT5G133 Datasheet (PDF)
gt5g133.pdf
GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit: mmUnit: mm Enhancement-mode Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130 A) Peak collector current: IC = 130 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-emi
gt5g102.pdf
GT5G102 TOSHIBA Insulated Gate Bipolar Transistor Preliminary Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : V = 8 V (max) (I = 130 A) CE (sat) C Enhancement-mode 12 V gate drive Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-emitte
gt5g103.pdf
GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS Unit: mm 3rd Generation (A) High Input Impedance Low Saturation Voltage : VCE (sat) = 8 V (Max.) (IC = 130 A) Enhancement-Mode 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT (B) Collector-Emitter Voltage VCES 40
Otros transistores... GT45F127 , GT45F128 , GT30F131 , GT30G124 , GT30G125 , GT45G127 , GT45G128 , GT30J124 , IKW75N60T , GT5J301 , GT8G151 , GT10G131 , GT10J303 , GT10J321 , GT15J301 , GT15J321 , GT20J321 .
Liste
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