GT5G133 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GT5G133  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 0.83 W

|Vce|ⓘ - Tensión máxima colector-emisor: 400 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 4 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 130(pulse) A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃

Encapsulados: TSON8

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GT5G133 datasheet

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GT5G133

GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit mm Unit mm Enhancement-mode Low gate drive voltage VGE = 2.5 V (min) (@IC = 130 A) Peak collector current IC = 130 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-emi

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GT5G133

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 gt5g103.pdf pdf_icon

GT5G133

GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS Unit mm 3rd Generation (A) High Input Impedance Low Saturation Voltage VCE (sat) = 8 V (Max.) (IC = 130 A) Enhancement-Mode 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT (B) Collector-Emitter Voltage VCES 40

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GT5G133

GT5G102 TOSHIBA Insulated Gate Bipolar Transistor Preliminary Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit mm 3rd Generation High input impedance Low saturation voltage V = 8 V (max) (I = 130 A) CE (sat) C Enhancement-mode 12 V gate drive Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-emitte

MOSTRAR MÁS

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