GT5G133 - аналоги, параметры транзистора - Справочник транзисторов

GT5G133 даташит

..1. Size:224K toshiba
gt5g133.pdf pdf_icon

GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit mm Unit mm Enhancement-mode Low gate drive voltage VGE = 2.5 V (min) (@IC = 130 A) Peak collector current IC = 130 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-emi

9.1. Size:134K toshiba
gt5g101.pdf pdf_icon

9.2. Size:369K toshiba
gt5g103.pdf pdf_icon

GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS Unit mm 3rd Generation (A) High Input Impedance Low Saturation Voltage VCE (sat) = 8 V (Max.) (IC = 130 A) Enhancement-Mode 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT (B) Collector-Emitter Voltage VCES 40

9.3. Size:79K toshiba
gt5g102.pdf pdf_icon

GT5G102 TOSHIBA Insulated Gate Bipolar Transistor Preliminary Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit mm 3rd Generation High input impedance Low saturation voltage V = 8 V (max) (I = 130 A) CE (sat) C Enhancement-mode 12 V gate drive Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-emitte

Другие IGBT... GT45F127 , GT45F128 , GT30F131 , GT30G124 , GT30G125 , GT45G127 , GT45G128 , GT30J124 , AOK40B65H2AL , GT5J301 , GT8G151 , GT10G131 , GT10J303 , GT10J321 , GT15J301 , GT15J321 , GT20J321 .