GT20J321 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT20J321
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 45 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Encapsulados: 2-10R1C
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GT20J321 datasheet
gt20j321.pdf
GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Unit mm Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS) Operating frequency up to 50 kHz (reference) High speed tf = 0.04 s (typ.) Low switching loss Eon = 0.40 mJ (typ.) Eoff = 0.43 mJ (typ.
gt20j311.pdf
GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J311 Unit mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) Low saturation voltage VCE (sat) = 2.7V (Max.) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SY
gt20j301.pdf
GT20J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 HIGH POWER SWITCHING APPLICATIONS Unit mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) Low saturation voltage VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHA
Otros transistores... GT5G133 , GT5J301 , GT8G151 , GT10G131 , GT10J303 , GT10J321 , GT15J301 , GT15J321 , FGL60N100BNTD , GT30J121 , GT30J122 , GT30J126 , GT30J324 , GT35J321 , GT40J121 , GT40J321 , GT40J322 .
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